SECOND-ORDER NONLINEAR SUSCEPTIBILITY ENHANCEMENT IN GALLIUM NITRIDE NANOWIRES (INVITED)
نویسندگان
چکیده
منابع مشابه
Diameter control of gallium nitride nanowires
Gallium nitride GaN nanowires are grown with controlled diameter and position by combining electron-beam lithography and naturally occurring surface tension forces. Lithographically defined particle diameters were held constant while only the film thickness was varied. Annealing drives as-deposited metal disks toward hemispheres according to conservation of volume constraints, resulting in well...
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ژورنال
عنوان ژورنال: Progress In Electromagnetics Research
سال: 2020
ISSN: 1559-8985
DOI: 10.2528/pier20072201